In semiconductor device fabrication,
channel-stopper or
channel-stop is an area in semiconductor devices produced by
ion implantation or
diffusion of
, by growing or patterning the
silicon oxide, or other isolation methods in semiconductor material with the primary function to limit the spread of the channel area or to prevent the formation of parasitic channels (inversion layers).
[" Smart Power ICs", by Bruno Murari, Franco Bertotti, Giovanni A. Vignola, Antonio Andreini, 2002, , pp. 47, 47]
